Lowering Ground Bounce Noise in Tri-Mode MTCMOS Circuits With Threshold Voltage Tuning
نویسندگان
چکیده
The continuous scaling down of technology, there is the exponential increase in leakage current. The MTCMOS is an attractive design to reduce the leakage current in idle state. Sleep-to-Active mode transition is an important concern in MTCMOS circuit because it produces ground bounce noise. In this paper, Threshold Voltage tuning method with MTCMOS circuit is used to reduce the ground bounce noise. An intermediate mode is applied between the Sleep-to-Active mode to reduce the virtual ground voltage. The dependence of ground bounce noise on voltage, transistor size and temperature is characterized with MTCMOS techniques. Different circuit techniques with threshold voltage tuning reduce the ground bounce noise, leakage current and active power by 85.93%, 99.96% and 94.25% respectively, as compared to conventional circuit. The simulation of multiplier with threshold voltage tuning circuit has been performed on cadence virtuoso 45nm CMOS technology.
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